FDZ299P

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Mfr.Part #
FDZ299P
Manufacturer
onsemi
Package / Case
9-WFBGA
Datasheet
Download
Description
MOSFET P-CH 20V 4.6A 9BGA
Stock
68,536
In Stock :
68,536

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Series :
PowerTrench®
Vgs (Max) :
±12V
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
4.6A
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
2.5V 4.5V
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Terminal Finish :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
10A
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 4.5V
Configuration :
SINGLE WITH BUILT-IN DIODE
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
BOTTOM
Power Dissipation-Max :
1.7W Ta
Drain to Source Voltage (Vdss) :
20V
DS Breakdown Voltage-Min :
20V
JESD-30 Code :
S-PBGA-B9
Pin Count :
9
Number of Terminations :
9
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.055Ohm
Input Capacitance (Ciss) (Max) @ Vds :
742pF @ 10V
Qualification Status :
COMMERCIAL
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
4.6A Ta
RoHS Status :
Non-RoHS Compliant
Rds On (Max) @ Id, Vgs :
55m Ω @ 4.6A, 4.5V
Pbfree Code :
No
Reach Compliance Code :
Unknown
Terminal Form :
Ball
Avalanche Energy Rating (Eas) :
48 mJ
Package / Case :
9-WFBGA
Datasheets
FDZ299P
Introducing Transistors - FETs, MOSFETs - Single onsemi FDZ299P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:9, Package / Case:9-WFBGA, FDZ299P pinout, FDZ299P datasheet PDF, FDZ299P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDZ299P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



P-Channel Tape & Reel (TR) 55m Ω @ 4.6A, 4.5V ±12V 742pF @ 10V 9nC @ 4.5V 20V 9-WFBGA

FDZ299P Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 48 mJ.The maximum input capacitance of this device is 742pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 4.6A.There is no pulsed drain current maximum for this device based on its rated peak drain current 10A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.

FDZ299P Features


the avalanche energy rating (Eas) is 48 mJ
based on its rated peak drain current 10A.
a 20V drain to source voltage (Vdss)


FDZ299P Applications


There are a lot of Rochester Electronics, LLC
FDZ299P applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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