FDU7N60NZTU
- Mfr.Part #
- FDU7N60NZTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5.5A I-PAK
- Stock
- 5,220
- In Stock :
- 5,220
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 22A
- Packaging :
- Tube
- Height :
- 7.57mm
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 40 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 730pF @ 25V
- Vgs (Max) :
- ±25V
- Factory Lead Time :
- 5 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 1.25 Ω @ 2.75A, 10V
- Length :
- 6.8mm
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Width :
- 2.5mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Weight :
- 343.08mg
- Power Dissipation :
- 90W
- Series :
- UniFET-II™
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 90W Tc
- Drain to Source Breakdown Voltage :
- 600V
- HTS Code :
- 8541.29.00.95
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 5.5A
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 25V
- Turn On Delay Time :
- 17.5 ns
- Transistor Application :
- SWITCHING
- Published :
- 2013
- Datasheets
- FDU7N60NZTU

N-Channel Tube 1.25 Ω @ 2.75A, 10V ±25V 730pF @ 25V 17nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
FDU7N60NZTU Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 730pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 22A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 25VV.In addition to reducing power consumption, this device uses drive voltage (10V).
FDU7N60NZTU Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 22A.
FDU7N60NZTU Applications
There are a lot of ON Semiconductor
FDU7N60NZTU applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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