FDU6N50TU
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- Mfr.Part #
- FDU6N50TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6A I-PAK
- Stock
- 9,586
- In Stock ：
- 9,586
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 89W Tc
- Pulsed Drain Current-Max (IDM) :
- 24A
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Series :
- UniFET™
- Published :
- 2013
- Input Capacitance (Ciss) (Max) @ Vds :
- 940pF @ 25V
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 35 ns
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Rise Time :
- 55ns
- Number of Terminations :
- 3
- Factory Lead Time :
- 5 Weeks
- Mount :
- Through Hole
- Packaging :
- Tube
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 3A, 10V
- Continuous Drain Current (ID) :
- 6A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Drain-source On Resistance-Max :
- 0.9Ohm
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 25 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 89W
- Avalanche Energy Rating (Eas) :
- 270 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 16.6nC @ 10V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drain Current-Max (Abs) (ID) :
- 6A
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 500V
- HTS Code :
- 8541.29.00.95
- Turn On Delay Time :
- 6 ns
- Weight :
- 343.08mg
- Mounting Type :
- Through Hole
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheets
- FDU6N50TU
N-Channel Tube 900m Ω @ 3A, 10V ±30V 940pF @ 25V 16.6nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
FDU6N50TU Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 270 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 940pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [6A] according to its drain current.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 24A.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
FDU6N50TU Features
the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 24A.
FDU6N50TU Applications
There are a lot of ON Semiconductor
FDU6N50TU applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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