FDU3N40TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

UniFET™

Drain Current-Max (Abs) (ID) :

2A

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Pbfree Code :

yes

Vgs (Max) :

±30V

Rise Time :

30ns

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

2A

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Element Configuration :

Single

Additional Feature :

FAST SWITCHING

Turn-Off Delay Time :

10 ns

Weight :

343.08mg

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Width :

2.5mm

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Avalanche Energy Rating (Eas) :

46 mJ

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Length :

6.8mm

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 25V

Power Dissipation :

30W

Height :

7.57mm

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Fall Time (Typ) :

25 ns

Pulsed Drain Current-Max (IDM) :

8A

Turn On Delay Time :

10 ns

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 1A, 10V

Resistance :

3.4Ohm

Power Dissipation-Max :

30W Tc

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Transistor Application :

SWITCHING

JESD-609 Code :

e3