FDT86244

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

2.4 ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

3.1V

Continuous Drain Current (ID) :

2.8A

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

150V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation-Max :

2.2W Ta

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

3.1 V

REACH SVHC :

No SVHC

Weight :

250.2mg

Package / Case :

TO-261-4, TO-261AA

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Power Dissipation :

2.2W

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

FET Type :

N-Channel

Height :

1.7mm

Width :

6.7mm

Factory Lead Time :

9 Weeks

JESD-609 Code :

e3

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

9.8 ns

ECCN Code :

EAR99

Element Configuration :

Single

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

395pF @ 75V

Case Connection :

DRAIN

Published :

2011

Number of Pins :

4

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

ULTRA-LOW RESISTANCE

Rise Time :

1.3ns

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Feedback Cap-Max (Crss) :

5 pF

Turn On Delay Time :

5.3 ns

Mount :

Surface Mount

Length :

3.7mm

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

128m Ω @ 2.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)