FDP18N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Mount :

Through Hole

Additional Feature :

FAST SWITCHING

Factory Lead Time :

9 Weeks

Gate to Source Voltage (Vgs) :

30V

Current :

18A

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

95 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

18A

REACH SVHC :

No SVHC

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Resistance :

265mOhm

Series :

UniFET™

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drain to Source Breakdown Voltage :

500V

Power Dissipation :

235W

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Power Dissipation-Max :

235W Tc

Avalanche Energy Rating (Eas) :

945 mJ

Published :

2013

Fall Time (Typ) :

90 ns

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Current Rating :

18A

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Width :

4.7mm

Number of Pins :

3

Vgs (Max) :

±30V

Number of Terminations :

3

Voltage :

500V

Packaging :

Tube

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

265m Ω @ 9A, 10V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Height :

9.4mm

Pbfree Code :

yes

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

165ns

Turn On Delay Time :

55 ns

Length :

10.1mm

Voltage - Rated DC :

500V

Lead Free :

Lead Free