FDP18N20F
- Mfr.Part #
- FDP18N20F
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 18,300
- In Stock :
- 18,300
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.67mm
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Power Dissipation :
- 100W
- Packaging :
- Tube
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 18A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn On Delay Time :
- 16 ns
- Turn-Off Delay Time :
- 50 ns
- Weight :
- 1.8g
- Width :
- 4.7mm
- Terminal Finish :
- Tin (Sn)
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 1180pF @ 25V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 145m Ω @ 9A, 10V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Rise Time :
- 50ns
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Fall Time (Typ) :
- 40 ns
- Vgs (Max) :
- ±30V
- Resistance :
- 145mOhm
- ECCN Code :
- EAR99
- Series :
- UniFET™
- Pulsed Drain Current-Max (IDM) :
- 72A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation-Max :
- 100W Tc
- Drain to Source Breakdown Voltage :
- 200V
- Number of Pins :
- 3
- Height :
- 16.3mm
- Mounting Type :
- Through Hole
- Published :
- 2013
- Datasheets
- FDP18N20F

N-Channel Tube 145m Ω @ 9A, 10V ±30V 1180pF @ 25V 26nC @ 10V TO-220-3
FDP18N20F Description
The high voltage UniFETTM MOSFET family from Fairchild Semiconductor is based on DMOS and planar stripe technology. This MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. Lifetime control has improved the UniFET FRFET? MOSFET's body diodes reverse recovery performance. While typical planar MOSFETs have over 200nsec and 4.5V/nsec, respectively, it has less than 10Onsec and reverse dv/dt immunity. Therefore, in some cases where the performance of the MOSFET's body diode is crucial, it can eliminate an extra component and increase system reliability. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.
FDP18N20F Features
? Minimal Gate Fee (Typ. 20 nC)
? Low Crss FTP (24pF)
? Only Avalanche-certified products
? RoHS conformant
FDP18N20F Applications
? LCD or LED TV
? Consumer electronics
? Lighting
? A backup power supply
? Power Supply, AC-DC
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