FDP18N20F

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Mfr.Part #
FDP18N20F
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Stock
18,300
In Stock :
18,300

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
10.67mm
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Power Dissipation :
100W
Packaging :
Tube
FET Type :
N-Channel
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Factory Lead Time :
4 Weeks
Gate to Source Voltage (Vgs) :
30V
Package / Case :
TO-220-3
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
18A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
5V @ 250μA
Turn On Delay Time :
16 ns
Turn-Off Delay Time :
50 ns
Weight :
1.8g
Width :
4.7mm
Terminal Finish :
Tin (Sn)
Qualification Status :
Not Qualified
Input Capacitance (Ciss) (Max) @ Vds :
1180pF @ 25V
Transistor Element Material :
SILICON
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
145m Ω @ 9A, 10V
Pbfree Code :
yes
Lead Free :
Lead Free
Rise Time :
50ns
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Element Configuration :
Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Fall Time (Typ) :
40 ns
Vgs (Max) :
±30V
Resistance :
145mOhm
ECCN Code :
EAR99
Series :
UniFET™
Pulsed Drain Current-Max (IDM) :
72A
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Power Dissipation-Max :
100W Tc
Drain to Source Breakdown Voltage :
200V
Number of Pins :
3
Height :
16.3mm
Mounting Type :
Through Hole
Published :
2013
Datasheets
FDP18N20F
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP18N20F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Number of Pins:3, Mounting Type:Through Hole, FDP18N20F pinout, FDP18N20F datasheet PDF, FDP18N20F amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDP18N20F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDP18N20F


N-Channel Tube 145m Ω @ 9A, 10V ±30V 1180pF @ 25V 26nC @ 10V TO-220-3

FDP18N20F Description


The high voltage UniFETTM MOSFET family from Fairchild Semiconductor is based on DMOS and planar stripe technology. This MOSFET is designed to offer superior switching performance, increased avalanche energy strength, and reduced on-state resistance. Lifetime control has improved the UniFET FRFET? MOSFET's body diodes reverse recovery performance. While typical planar MOSFETs have over 200nsec and 4.5V/nsec, respectively, it has less than 10Onsec and reverse dv/dt immunity. Therefore, in some cases where the performance of the MOSFET's body diode is crucial, it can eliminate an extra component and increase system reliability. For switching power converter applications such power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts, this device family is appropriate.



FDP18N20F Features


? Minimal Gate Fee (Typ. 20 nC)


? Low Crss FTP (24pF)


? Only Avalanche-certified products


? RoHS conformant



FDP18N20F Applications


? LCD or LED TV


? Consumer electronics


? Lighting


? A backup power supply


? Power Supply, AC-DC


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