FDMC86520L
- Mfr.Part #
- FDMC86520L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 11,278
- In Stock :
- 11,278
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.0079Ohm
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 22A Tc
- Height :
- 750μm
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Width :
- 3.3mm
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Package / Case :
- 8-PowerWDFN
- Continuous Drain Current (ID) :
- 13.5A
- Turn-Off Delay Time :
- 32 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4550pF @ 30V
- Power Dissipation :
- 2.3W
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Packaging :
- Cut Tape (CT)
- Published :
- 2017
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 15 ns
- Series :
- PowerTrench®
- Pbfree Code :
- yes
- JESD-30 Code :
- S-PDSO-N5
- Power Dissipation-Max :
- 2.3W Ta 40W Tc
- JEDEC-95 Code :
- MO-229
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rds On (Max) @ Id, Vgs :
- 7.9m Ω @ 13.5A, 10V
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 14 Weeks
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain Current-Max (Abs) (ID) :
- 22A
- Mounting Type :
- Surface Mount
- Weight :
- 165.33333mg
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Rise Time :
- 5.2ns
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e4
- Avalanche Energy Rating (Eas) :
- 79 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 5
- Fall Time (Typ) :
- 3.4 ns
- Pulsed Drain Current-Max (IDM) :
- 60A
- FET Type :
- N-Channel
- Length :
- 3.3mm
- Datasheets
- FDMC86520L
FDMC86520L Documents

N-Channel Cut Tape (CT) 7.9m Ω @ 13.5A, 10V ±20V 4550pF @ 30V 64nC @ 10V 8-PowerWDFN
FDMC7696 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse recovery performance.
FDMC86520L Features
Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
FDMC86520L Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
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