FDMC86520L
- Mfr.Part #
- FDMC86520L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 11,278
- In Stock :
- 11,278
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Weight :
- 165.33333mg
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Power Dissipation :
- 2.3W
- Package / Case :
- 8-PowerWDFN
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Number of Pins :
- 8
- Factory Lead Time :
- 14 Weeks
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 60A
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 60V
- Fall Time (Typ) :
- 3.4 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4550pF @ 30V
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 79 mJ
- JEDEC-95 Code :
- MO-229
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 750μm
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Ta 22A Tc
- Drain Current-Max (Abs) (ID) :
- 22A
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 2.3W Ta 40W Tc
- Case Connection :
- DRAIN
- Number of Terminations :
- 5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rise Time :
- 5.2ns
- JESD-609 Code :
- e4
- Rds On (Max) @ Id, Vgs :
- 7.9m Ω @ 13.5A, 10V
- Width :
- 3.3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 32 ns
- Turn On Delay Time :
- 15 ns
- JESD-30 Code :
- S-PDSO-N5
- Continuous Drain Current (ID) :
- 13.5A
- Published :
- 2017
- Length :
- 3.3mm
- Drain-source On Resistance-Max :
- 0.0079Ohm
- Series :
- PowerTrench®
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Datasheets
- FDMC86520L

N-Channel Cut Tape (CT) 7.9m Ω @ 13.5A, 10V ±20V 4550pF @ 30V 64nC @ 10V 8-PowerWDFN
FDMC7696 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse recovery performance.
FDMC86520L Features
Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
FDMC86520L Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
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