FDMC86340ET80
- Mfr.Part #
- FDMC86340ET80
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 14A/68A POWER33
- Stock
- 30,340
- In Stock :
- 30,340
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Continuous Drain Current (ID) :
- 68A
- Weight :
- 152.7mg
- Rds On (Max) @ Id, Vgs :
- 6.5m Ω @ 14A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Series :
- PowerTrench®
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 2.8W Ta 65W Tc
- Fall Time (Typ) :
- 5.1 ns
- Package / Case :
- 8-PowerWDFN
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 23 ns
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Turn On Delay Time :
- 20 ns
- Rise Time :
- 7.9ns
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2775pF @ 40V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta 68A Tc
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- JESD-609 Code :
- e3
- Factory Lead Time :
- 10 Weeks
- Datasheets
- FDMC86340ET80
FDMC86340ET80 Documents

N-Channel Tape & Reel (TR) 6.5m Ω @ 14A, 10V ±20V 2775pF @ 40V 49nC @ 10V 8-PowerWDFN
FDMC86340ET80 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2775pF @ 40V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 23 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (8V 10V).
FDMC86340ET80 Features
a continuous drain current (ID) of 68A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 23 ns
FDMC86340ET80 Applications
There are a lot of ON Semiconductor
FDMC86340ET80 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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