FDMC86261P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Case Connection :

DRAIN

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

ECCN Code :

EAR99

JESD-609 Code :

e4

Vgs (Max) :

±25V

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

20A

Power Dissipation :

2.3W

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta 9A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 75V

Length :

3.3mm

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-150V

JESD-30 Code :

S-PDSO-N5

Turn-Off Delay Time :

18 ns

Terminal Position :

Dual

Package / Case :

8-PowerWDFN

Mount :

Surface Mount

Contact Plating :

Gold

Width :

3.3mm

Fall Time (Typ) :

20 ns

Pbfree Code :

yes

Weight :

165.33333mg

Drain to Source Voltage (Vdss) :

150V

Gate to Source Voltage (Vgs) :

25V

Height :

725μm

Published :

2017

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

160m Ω @ 2.4A, 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

2.7A

Power Dissipation-Max :

2.3W Ta 40W Tc

Rise Time :

10ns

Series :

PowerTrench®

Drain Current-Max (Abs) (ID) :

9A