FDMC86260
- Mfr.Part #
- FDMC86260
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N CH 150V 5.4A POWER 33
- Stock
- 16,284
- In Stock :
- 16,284
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 152.7mg
- Width :
- 3.3mm
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 17 ns
- Power Dissipation-Max :
- 2.3W Ta 54W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Factory Lead Time :
- 10 Weeks
- Avalanche Energy Rating (Eas) :
- 121 mJ
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Base Part Number :
- FDMC86260
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 5.4A, 10V
- Turn On Delay Time :
- 9.5 ns
- Number of Elements :
- 1
- Package / Case :
- 8-PowerWDFN
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.034Ohm
- Length :
- 3.3mm
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Rise Time :
- 2ns
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 5.4A
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Height :
- 750μm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1330pF @ 75V
- Fall Time (Typ) :
- 3.3 ns
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- S-PDSO-N5
- Drain to Source Breakdown Voltage :
- 150V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 54W
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2010
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 8
- JEDEC-95 Code :
- MO-240BA
- Number of Terminations :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A Ta 16A Tc
- Continuous Drain Current (ID) :
- 16A
- Series :
- PowerTrench®
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Datasheets
- FDMC86260
FDMC86260 Documents

N-Channel Tape & Reel (TR) 34m Ω @ 5.4A, 10V ±20V 1330pF @ 75V 21nC @ 10V 8-PowerWDFN
FDMC86260 Description
FDMC86260 is an N-Channel Power Trench? MOSFET manufactured by onsemi. The N-Channel MOSFET FDMC86260 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor FDMC86260 is in the Power-33-8 package with 54w power dissipation.
FDMC86260 Features
-
Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A
-
Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A
-
High-performance technology for extremely low RDS(on)
-
100% UIL Tested
-
Termination is Lead-free
FDMC86260 Applications
-
cellular phones
-
laptop computers
-
photovoltaic systems
-
wind turbines
-
shunt voltage regulator and the series voltage regulator
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