FDMC86240

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

4.6A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Length :

3.3mm

Pulsed Drain Current-Max (IDM) :

20A

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta 16A Tc

Transistor Element Material :

SILICON

Turn On Delay Time :

8.2 ns

Width :

3.3mm

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

51m Ω @ 4.6A, 10V

Avalanche Energy Rating (Eas) :

34 mJ

Power Dissipation :

40W

Fall Time (Typ) :

3.1 ns

JESD-609 Code :

e4

FET Type :

N-Channel

Number of Elements :

1

Pbfree Code :

yes

Radiation Hardening :

No

Published :

2007

Continuous Drain Current (ID) :

16A

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

905pF @ 75V

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Rise Time :

1.7ns

Element Configuration :

Single

Number of Pins :

8

JESD-30 Code :

S-PDSO-N5

Mounting Type :

Surface Mount

Height :

750μm

Weight :

165.33333mg

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Contact Plating :

Gold, Silver

Number of Terminations :

5

Series :

PowerTrench®

Threshold Voltage :

2.9V

Drain to Source Breakdown Voltage :

150V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

Resistance :

70mOhm

Package / Case :

8-PowerWDFN

Power Dissipation-Max :

2.3W Ta 40W Tc