FDMC8622

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Mfr.Part #
FDMC8622
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET N-CH 100V 4A/16A 8MLP
Stock
35,926
In Stock :
35,926

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
4A Ta 16A Tc
Pbfree Code :
yes
Series :
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs :
7.3nC @ 10V
Nominal Vgs :
2.9 V
Fall Time (Typ) :
2.2 ns
Threshold Voltage :
2.9V
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
16A
Pulsed Drain Current-Max (IDM) :
30A
Package / Case :
8-PowerWDFN
Transistor Element Material :
SILICON
Width :
3.3mm
FET Type :
N-Channel
Weight :
200mg
Radiation Hardening :
No
Rise Time :
1.6ns
Element Configuration :
Single
REACH SVHC :
No SVHC
Input Capacitance (Ciss) (Max) @ Vds :
402pF @ 50V
JESD-609 Code :
e4
Power Dissipation :
31W
Case Connection :
DRAIN
Vgs (Max) :
±20V
Additional Feature :
ULTRA-LOW RESISTANCE
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form :
Flat
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
8
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn-Off Delay Time :
10.2 ns
Terminal Position :
Dual
Drain-source On Resistance-Max :
0.056Ohm
Drain Current-Max (Abs) (ID) :
4A
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Length :
3.3mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
JESD-30 Code :
R-PDSO-F5
Drain to Source Breakdown Voltage :
100V
ECCN Code :
EAR99
Factory Lead Time :
4 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
37 mJ
Turn On Delay Time :
5.9 ns
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
5
Power Dissipation-Max :
2.5W Ta 31W Tc
Gate to Source Voltage (Vgs) :
20V
JEDEC-95 Code :
MO-240BA
Height :
750μm
Rds On (Max) @ Id, Vgs :
56m Ω @ 4A, 10V
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC8622 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerWDFN, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, Number of Terminations:5, FDMC8622 pinout, FDMC8622 datasheet PDF, FDMC8622 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC8622 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC8622


N-Channel Tape & Reel (TR) 56m Ω @ 4A, 10V ±20V 402pF @ 50V 7.3nC @ 10V 8-PowerWDFN

FDMC8622   Description


 The N-channel MOSFET  FDMC8622  adopts advanced Power Tritch manufacturing process and shielded grid technology. The process is optimized for RDS, switching performance and robustness.

 

 FDMC8622    Features

 

Shielded Gate MOSFET Technology

Max rDS(on) = 56 mΩat VGS = 10 V, ID = 4 A

Max rDS(on) = 100 mΩat VGS = 6 V, ID = 3 A

High performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used surface mount package

100% UIL Tested

Termination is Lead-free and RoHS Compliant


FDMC8622   Applications


This product is general usage and suitable for many different applications.

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