FDMC86139P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

17 ns

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Transistor Element Material :

SILICON

Radiation Hardening :

No

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

Length :

3.3mm

Input Capacitance (Ciss) (Max) @ Vds :

1335pF @ 50V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

4.4A Ta 15A Tc

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

40W

Rise Time :

2.5ns

Number of Elements :

1

JESD-30 Code :

S-PDSO-N5

Mounting Type :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

JESD-609 Code :

e4

Package / Case :

8-PowerWDFN

Pulsed Drain Current-Max (IDM) :

30A

Width :

3.3mm

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

4 ns

Series :

PowerTrench®

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Number of Terminations :

5

Turn On Delay Time :

11 ns

Transistor Application :

SWITCHING

Published :

2017

RoHS Status :

ROHS3 Compliant

Height :

800μm

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

25V

FET Type :

P-Channel

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Number of Pins :

8

ECCN Code :

EAR99

Turn On Time-Max (ton) :

30ns

Rds On (Max) @ Id, Vgs :

67m Ω @ 4.4A, 10V

Lead Free :

Lead Free

Threshold Voltage :

-3V

Continuous Drain Current (ID) :

-4.4A

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-100V

Weight :

165.33333mg

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.067Ohm

Power Dissipation-Max :

2.3W Ta 40W Tc

Case Connection :

DRAIN

Turn Off Time-Max (toff) :

40ns

Factory Lead Time :

14 Weeks