FDMC86102LZ
- Mfr.Part #
- FDMC86102LZ
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7A/18A 8MLP
- Stock
- 242,098
- In Stock :
- 242,098
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Contact Plating :
- Gold, Silver
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 2.3W Ta 41W Tc
- Turn-Off Delay Time :
- 19 ns
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 6.5A, 10V
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 41W
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Package / Case :
- 8-PowerWDFN
- Case Connection :
- DRAIN
- Height :
- 750μm
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 30A
- Drain to Source Breakdown Voltage :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1290pF @ 50V
- Number of Terminations :
- 5
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2017
- Continuous Drain Current (ID) :
- 7A
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Resistance :
- 24mOhm
- Weight :
- 165.33333mg
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 7.1 ns
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta 18A Tc
- JESD-30 Code :
- S-PDSO-N5
- Fall Time (Typ) :
- 2.5 ns
- Length :
- 3.3mm
- Nominal Vgs :
- 1.6 V
- Width :
- 3.3mm
- Series :
- PowerTrench®
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 7A
- Rise Time :
- 2.3ns
- FET Type :
- N-Channel
- JESD-609 Code :
- e4
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- FDMC86102LZ

N-Channel Tape & Reel (TR) 24m Ω @ 6.5A, 10V ±20V 1290pF @ 50V 22nC @ 10V 8-PowerWDFN
FDMC86102LZ Description
This N-Channel logic Level MOSFET is made with the sophisticated PowerTrench? process, which includes Shielded Gate technology. The on-state resistance of this technique has been improved while maintaining exceptional switching performance. To improve the ESD voltage level, a G-S zener has been installed.
FDMC86102LZ Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A
-
Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A
-
HBM ESD protection level > 6 KV typical (Note 4)
-
100% UIL Tested
-
RoHS Compliant
FDMC86102LZ Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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