FDMC86102

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

JESD-609 Code :

e4

JEDEC-95 Code :

MO-240BA

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

72 mJ

Turn On Delay Time :

8 ns

Lead Free :

Lead Free

FET Type :

N-Channel

Power Dissipation-Max :

2.3W Ta 41W Tc

Weight :

32.13mg

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Turn-Off Delay Time :

14 ns

Length :

3.4mm

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Pbfree Code :

yes

Continuous Drain Current (ID) :

20A

Power Dissipation :

2.3W

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

100V

Factory Lead Time :

40 Weeks

Drain Current-Max (Abs) (ID) :

7A

Width :

3.4mm

Mounting Type :

Surface Mount

Element Configuration :

Single

Number of Elements :

1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

965pF @ 50V

Height :

950μm

Rise Time :

4ns

Resistance :

24mOhm

Nominal Vgs :

3.1 V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Case Connection :

DRAIN

Fall Time (Typ) :

4 ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

JESD-30 Code :

S-PDSO-N5

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Threshold Voltage :

3.1V

Series :

PowerTrench®

Number of Terminations :

5

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

30A

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

7A Ta 20A Tc

Terminal Finish :

Nickel/Palladium (Ni/Pd)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount