FDMC86012

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

11ns

Number of Terminations :

5

Package / Case :

8-PowerWDFN

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 4.5V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Radiation Hardening :

No

JESD-30 Code :

S-PDSO-N5

Input Capacitance (Ciss) (Max) @ Vds :

5075pF @ 15V

Number of Elements :

1

Drain-source On Resistance-Max :

0.0027Ohm

Turn-Off Delay Time :

43 ns

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

54W

Series :

PowerTrench®

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Terminal Position :

Dual

Weight :

152.7mg

Power Dissipation-Max :

2.3W Ta 54W Tc

Number of Pins :

8

JEDEC-95 Code :

MO-240BA

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

12V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

ECCN Code :

EAR99

Turn On Delay Time :

20 ns

Transistor Application :

SWITCHING

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

23A Ta

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

230A

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 23A, 4.5V

Continuous Drain Current (ID) :

23A

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Avalanche Energy Rating (Eas) :

337 mJ

RoHS Status :

ROHS3 Compliant