FDMC7696

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

2 V

Gate to Source Voltage (Vgs) :

20V

Weight :

180mg

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

9 ns

Turn-Off Delay Time :

19 ns

Pulsed Drain Current-Max (IDM) :

50A

Fall Time (Typ) :

2 ns

Number of Terminations :

5

FET Type :

N-Channel

Width :

3.3mm

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Factory Lead Time :

23 Weeks

Power Dissipation-Max :

2.4W Ta 25W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Terminal Position :

Dual

Pbfree Code :

yes

JESD-30 Code :

S-PDSO-N5

Radiation Hardening :

No

Threshold Voltage :

2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1430pF @ 15V

REACH SVHC :

No SVHC

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 12A, 10V

Package / Case :

8-PowerWDFN

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Height :

750μm

Rise Time :

2ns

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

20A

Length :

3.3mm

Number of Elements :

1

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

12A Ta 20A Tc

Power Dissipation :

25W

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

JESD-609 Code :

e4

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V