FDMC7660DC
- Mfr.Part #
- FDMC7660DC
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 29,942
- In Stock :
- 29,942
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 3W Ta 78W Tc
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 22A, 10V
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 2 V
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.3mm
- Length :
- 3.3mm
- Case Connection :
- DRAIN
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 8 Weeks
- Drain Current-Max (Abs) (ID) :
- 40A
- Fall Time (Typ) :
- 5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta 40A Tc
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5170pF @ 15V
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- MO-240BA
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation :
- 78W
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Elements :
- 1
- Series :
- Dual Cool™, PowerTrench®
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 30A
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 36 ns
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 200A
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Height :
- 950μm
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 8
- Number of Terminations :
- 5
- Avalanche Energy Rating (Eas) :
- 220 mJ
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Turn On Delay Time :
- 17 ns
- JESD-30 Code :
- S-PDSO-N5
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 6.6ns
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 32.13mg
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 76nC @ 10V
- Resistance :
- 2.2MOhm
- Datasheets
- FDMC7660DC
FDMC7660DC Documents
N-Channel Tape & Reel (TR) 2.2m Ω @ 22A, 10V ±20V 5170pF @ 15V 76nC @ 10V 8-PowerTDFN
FDMC7660DC Description
An innovative Power Trench? technology is used to create this N-Channel MOSFET. With extremely low Junction-to-Ambient thermal resistance, advances in both silicon and Dual CoolTM packaging technologies have been coupled to give the lowest rDS(on) while preserving good switching performance.
FDMC7660DC Features
-
Dual Cool? Top Side Cooling PQFN package
-
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 22 A
-
Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A
-
High performance technology for extremely low rDS(on)
-
Termination is Lead-free and RoHS Compliant
FDMC7660DC Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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