FDMC7570S
- Mfr.Part #
- FDMC7570S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 27A/40A POWER33
- Stock
- 4,950
- In Stock :
- 4,950
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerTDFN
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Width :
- 3.3mm
- Published :
- 2006
- ECCN Code :
- EAR99
- Length :
- 3.3mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4410pF @ 13V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- PowerTrench®, SyncFET™
- Turn On Delay Time :
- 14 ns
- Case Connection :
- DRAIN
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Threshold Voltage :
- 1.7V
- Fall Time (Typ) :
- 4.5 ns
- Number of Terminations :
- 5
- JEDEC-95 Code :
- MO-240BA
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Nominal Vgs :
- 1.7 V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 27A Ta 40A Tc
- JESD-30 Code :
- R-PDSO-N5
- Weight :
- 32.13mg
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 27A
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 25V
- Power Dissipation :
- 59W
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Continuous Drain Current (ID) :
- 40A
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 6.8ns
- Turn-Off Delay Time :
- 34 ns
- Factory Lead Time :
- 10 Weeks
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Power Dissipation-Max :
- 2.3W Ta 59W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 27A, 10V
- Height :
- 1.05mm
- Resistance :
- 2MOhm
- Datasheets
- FDMC7570S
FDMC7570S Documents

N-Channel Tape & Reel (TR) 2m Ω @ 27A, 10V ±20V 4410pF @ 13V 68nC @ 10V 8-PowerTDFN
Description
The FDMC7570S is an N-Channel Power Trench? SyncFET? 25V, 40A, 2mΩ. The FDMC7570S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
Features
-
SyncFET Schottky Body Diode
-
100% UIL Tested
-
RoHS Compliant
-
Max rDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A
-
Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A
-
Advanced Package and Combination for low rDS(on) and high efficiency
Applications
-
Networking Point of Load Low Side Switch
-
Telecom Secondary Side Rectification
-
Synchronous Rectifier for DC/DC Converters
-
Notebook Vcore/GPU Low Side Switch
-
Switch, Buck and Synchronous Rectification
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