FDMC6679AZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Power Dissipation-Max :

2.3W Ta 41W Tc

Package / Case :

8-PowerWDFN

Published :

2006

Width :

3.3mm

Number of Terminations :

5

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Vgs (Max) :

±25V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

11.5A Ta 20A Tc

Mounting Type :

Surface Mount

Resistance :

10MOhm

Drain to Source Breakdown Voltage :

-30V

Rds On (Max) @ Id, Vgs :

10m Ω @ 11.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

3970pF @ 15V

Factory Lead Time :

23 Weeks

Threshold Voltage :

-1.8V

JESD-609 Code :

e4

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

30V

Weight :

165.33333mg

Pbfree Code :

yes

ECCN Code :

EAR99

Power Dissipation :

41W

JESD-30 Code :

S-PDSO-N5

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Turn-Off Delay Time :

63 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

46 ns

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

32A

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Transistor Application :

SWITCHING

Contact Plating :

Gold

Terminal Position :

Dual

Series :

PowerTrench®

Length :

3.3mm

Rise Time :

14ns

Height :

750μm

Continuous Drain Current (ID) :

11.5A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

25V

FET Type :

P-Channel