FDMC6675BZ

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Mfr.Part #
FDMC6675BZ
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET P-CH 30V 9.5A/20A 8MLP
Stock
2,619
In Stock :
2,619

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
2.3W
Rise Time :
10ns
Length :
3.3mm
Element Configuration :
Single
Fall Time (Typ) :
26 ns
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
-30V
Pulsed Drain Current-Max (IDM) :
32A
Gate to Source Voltage (Vgs) :
25V
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Threshold Voltage :
-1.9V
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2010
Turn On Delay Time :
11 ns
Height :
750μm
Turn-Off Delay Time :
44 ns
Pbfree Code :
yes
Mount :
Surface Mount
Power Dissipation-Max :
2.3W Ta 36W Tc
Factory Lead Time :
23 Weeks
Resistance :
14.4MOhm
Weight :
200mg
FET Type :
P-Channel
Drain to Source Voltage (Vdss) :
30V
Operating Temperature :
-55°C~150°C TJ
Vgs (Max) :
±25V
JESD-609 Code :
e4
Package / Case :
8-PowerWDFN
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
9.5A Ta 20A Tc
Additional Feature :
ULTRA-LOW RESISTANCE
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2865pF @ 15V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain Current-Max (Abs) (ID) :
40A
Terminal Position :
Dual
Series :
PowerTrench®
JESD-30 Code :
S-PDSO-N5
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Number of Pins :
8
Continuous Drain Current (ID) :
9.5A
Number of Elements :
1
Radiation Hardening :
No
Rds On (Max) @ Id, Vgs :
14.4m Ω @ 9.5A, 10V
Number of Terminations :
5
Width :
3.3mm
Lead Free :
Lead Free
Datasheets
FDMC6675BZ
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMC6675BZ from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerWDFN, Number of Pins:8, Number of Terminations:5, FDMC6675BZ pinout, FDMC6675BZ datasheet PDF, FDMC6675BZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMC6675BZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMC6675BZ


P-Channel Tape & Reel (TR) 14.4m Ω @ 9.5A, 10V ±25V 2865pF @ 15V 65nC @ 10V 30V 8-PowerWDFN

FDMC6675BZ Description


The FDMC6675BZ is a P-channel MOSFET produced using the PowerTrench? process. The onsemi FDMC6675BZ is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. The FDMC6675BZ is suitable for load switch and battery pack applications.



FDMC6675BZ Features


  • Max RDS(on) = 14.4 m at VGS = ?10 V, ID = ?9.5 A

  • Max RDS(on) = 27.0 m at VGS = ?4.5 V, ID = ?6.9 A

  • HBM ESD Protection Level of 8 kV Typical (Note 3)

  • Extended VGSS Range (?25 V) for Battery Applications

  • High Performance Trench Technology for Extremely Low RDS(on)

  • High Power and Current Handling Capability  

  • Pb?Free, Halogen Free/BFR Free and are RoHS Compliant



FDMC6675BZ Applications


  • Load Switch in Notebook 

  • Server

  • Notebook Battery Pack Power Management


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