FDMC610P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

37ns

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

22A

Drain to Source Breakdown Voltage :

-12V

Fall Time (Typ) :

87 ns

Package / Case :

8-PowerTDFN

Terminal Position :

Dual

Case Connection :

DRAIN

Series :

PowerTrench®

Pbfree Code :

yes

Number of Pins :

8

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JEDEC-95 Code :

MO-240BA

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Turn-Off Delay Time :

193 ns

Power Dissipation-Max :

2.4W Ta 48W Tc

Continuous Drain Current (ID) :

80A

Factory Lead Time :

10 Weeks

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 22A, 4.5V

Width :

3.4mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

1mm

Length :

3.4mm

Element Configuration :

Single

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

Weight :

32.13mg

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

5

Mount :

Surface Mount

Turn On Delay Time :

24 ns

Vgs (Max) :

±8V

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

99nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 6V

Number of Channels :

1

Drain-source On Resistance-Max :

0.0039Ohm

Pulsed Drain Current-Max (IDM) :

200A

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

S-PDSO-N5

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON