FDMC5614P
- Mfr.Part #
- FDMC5614P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 5.7A/13.5A 8MLP
- Stock
- 192,396
- In Stock :
- 192,396
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 5.7A Ta 13.5A Tc
- Drain to Source Voltage (Vdss) :
- 60V
- JESD-30 Code :
- S-PDSO-F5
- Rise Time :
- 11ns
- JESD-609 Code :
- e4
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Width :
- 3.3mm
- Package / Case :
- 8-PowerWDFN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Continuous Drain Current (ID) :
- -5.7A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1055pF @ 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- -60V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 23A
- Threshold Voltage :
- -1.95V
- Terminal Form :
- Flat
- FET Type :
- P-Channel
- Height :
- 725μm
- Fall Time (Typ) :
- 11 ns
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 32 ns
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 100MOhm
- Pbfree Code :
- yes
- Length :
- 3.3mm
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Number of Terminations :
- 5
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±20V
- Current Rating :
- -5.7A
- Voltage - Rated DC :
- -60V
- Power Dissipation-Max :
- 2.1W Ta 42W Tc
- Turn On Delay Time :
- 10 ns
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Weight :
- 200mg
- Number of Pins :
- 8
- Power Dissipation :
- 2.1W
- Factory Lead Time :
- 10 Weeks
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 5.7A, 10V
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- FDMC5614P
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P-Channel Tape & Reel (TR) 100m Ω @ 5.7A, 10V ±20V 1055pF @ 30V 20nC @ 10V 60V 8-PowerWDFN
FDMC5614P Description
FDMC5614P is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The rugged gate variant of ON Semiconductor's superior PowerTrench? technology is used in this P-Channel MOSFET. It was designed with a wide range of gate drive voltage ratings in mind for power management applications (4.5V-20V).
FDMC5614P Features
-
Max rDS(on) = 100mΩ at VGS = -10V, ID = -5.7A
-
Max rDS(on) = 135mΩ at VGS = -4.5V, ID = -4.4A
-
Low gate charge
-
Fast switching speed
-
High performance trench technology for extremely low rDS(on)
-
High power and current handling capability
-
RoHS Compliant
FDMC5614P Applications
-
Power management
-
Load switch
-
Battery protection
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