FDMC4435BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

3.3mm

Power Dissipation :

2.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta 18A Tc

Gate to Source Voltage (Vgs) :

25V

Nominal Vgs :

-1.9 V

Threshold Voltage :

-1.9V

Number of Terminations :

5

Height :

800μm

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

50A

JESD-30 Code :

S-PDSO-N5

Max Junction Temperature (Tj) :

150°C

Rise Time :

6ns

ECCN Code :

EAR99

Number of Elements :

1

Lead Free :

Lead Free

Resistance :

20mOhm

Pbfree Code :

yes

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

PowerTrench®

Number of Pins :

8

Package / Case :

8-PowerWDFN

Avalanche Energy Rating (Eas) :

24 mJ

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

20 ns

Vgs (Max) :

±25V

Rds On (Max) @ Id, Vgs :

20m Ω @ 8.5A, 10V

Factory Lead Time :

23 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power Dissipation-Max :

2.3W Ta 31W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2045pF @ 15V

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Weight :

200mg

Element Configuration :

Single

Continuous Drain Current (ID) :

-8.5A

Width :

3.3mm

Radiation Hardening :

No

Turn-Off Delay Time :

35 ns

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-30V

Contact Plating :

Gold

Transistor Application :

SWITCHING

JESD-609 Code :

e4

Additional Feature :

ULTRA-LOW RESISTANCE