FDMC2610

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3mm

Voltage - Rated DC :

220V

Height :

950μm

Package / Case :

8-PowerWDFN

Rise Time :

13ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

2.2A

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Power Dissipation :

2.1W

Number of Terminations :

8

JESD-609 Code :

e4

Qualification Status :

Not Qualified

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mount :

Surface Mount

Published :

2017

Resistance :

200mOhm

Rds On (Max) @ Id, Vgs :

200m Ω @ 2.2A, 10V

Power Dissipation-Max :

2.1W Ta 42W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Length :

3mm

Weight :

165.33333mg

Contact Plating :

Tin

Factory Lead Time :

10 Weeks

Lead Free :

Lead Free

Terminal Form :

Flat

Turn-Off Delay Time :

29 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta 9.5A Tc

Vgs (Max) :

±20V

Element Configuration :

Single

Turn On Delay Time :

17 ns

Series :

UniFET™

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Drain to Source Breakdown Voltage :

200V

FET Type :

N-Channel

Continuous Drain Current (ID) :

9.5A

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 100V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Fall Time (Typ) :

16 ns

Current Rating :

9.5A

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Mounting Type :

Surface Mount