FDMC2514SDC
- Mfr.Part #
- FDMC2514SDC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 24A/40A DLCOOL33
- Stock
- 4,469
- In Stock :
- 4,469
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 200A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Dual Cool™, PowerTrench®, SyncFET™
- Number of Terminations :
- 5
- Fall Time (Typ) :
- 3 ns
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- MO-240BA
- Mounting Type :
- Surface Mount
- Rise Time :
- 3.6ns
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- 1.7 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2705pF @ 13V
- Case Connection :
- DRAIN SOURCE
- Drain Current-Max (Abs) (ID) :
- 40A
- JESD-30 Code :
- S-PDSO-N5
- Continuous Drain Current (ID) :
- 24A
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Turn On Delay Time :
- 11 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 8
- Drain-source On Resistance-Max :
- 0.0035Ohm
- Width :
- 3.3mm
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 26 ns
- Power Dissipation-Max :
- 3W Ta 60W Tc
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-PowerTDFN
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 25V
- Height :
- 950μm
- Threshold Voltage :
- 1.7V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 24A Ta 40A Tc
- Weight :
- 32.13mg
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 3W
- Published :
- 2009
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 8 Weeks
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 22.5A, 10V
- Mount :
- Surface Mount
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Length :
- 3.3mm
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- FDMC2514SDC

N-Channel Tape & Reel (TR) 3.5m Ω @ 22.5A, 10V ±20V 2705pF @ 13V 44nC @ 10V 8-PowerTDFN
FDMC2514SDC Description
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench? process.
Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
FDMC2514SDC Features
Dual CoolTM Top Side Cooling PQFN package
Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 22.5 A
Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
High-performance technology for extremely low RDS(on)
SyncFET Schottky Body Diode
RoHS Compliant
FDMC2514SDC Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
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