FDMC15N06
- Mfr.Part #
- FDMC15N06
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 2.4A/15A 8MLP
- Stock
- 1,812
- In Stock :
- 1,812
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Width :
- 3.3mm
- Height :
- 500μm
- Drain-source On Resistance-Max :
- 0.09Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 11.5nC @ 10V
- Number of Pins :
- 8
- Factory Lead Time :
- 7 Weeks
- Rise Time :
- 36.5ns
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- 8-PowerWDFN
- Avalanche Energy Rating (Eas) :
- 36 mJ
- JESD-30 Code :
- S-PDSO-N5
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Ta 15A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Packaging :
- Cut Tape (CT)
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 22.5 ns
- Power Dissipation-Max :
- 2.3W Ta 35W Tc
- Turn On Delay Time :
- 9.5 ns
- Drain to Source Breakdown Voltage :
- 55V
- Pulsed Drain Current-Max (IDM) :
- 60A
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Length :
- 3.3mm
- Drain Current-Max (Abs) (ID) :
- 2.4A
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 900m Ω @ 15A, 10V
- Weight :
- 200mg
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 22 ns
- Power Dissipation :
- 35W
- Number of Terminations :
- 5
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Continuous Drain Current (ID) :
- 15A
- Pbfree Code :
- yes
- Datasheets
- FDMC15N06

N-Channel Cut Tape (CT) 900m Ω @ 15A, 10V ±20V 350pF @ 25V 11.5nC @ 10V 8-PowerWDFN
FDMC15N06 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 36 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 350pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 55V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 55V.There is no drain current on this device since the maximum continuous current it can conduct is 2.4A.As a result of its turn-off delay time, which is 22.5 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 60A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
FDMC15N06 Features
the avalanche energy rating (Eas) is 36 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 22.5 ns
based on its rated peak drain current 60A.
FDMC15N06 Applications
There are a lot of ON Semiconductor
FDMC15N06 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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