FDMB668P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.035Ohm

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

8-PowerWDFN

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

0.0061A

Vgs (Max) :

±8V

FET Type :

P-Channel

Terminal Position :

Dual

Power Dissipation-Max :

1.9W Ta

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-N8

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2.085pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Rds On (Max) @ Id, Vgs :

35m Ω @ 6.1A, 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Pin Count :

8

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

6.1A Ta

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Finish :

Tin

Number of Terminations :

8

Feedback Cap-Max (Crss) :

265 pF

Qualification Status :

COMMERCIAL

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount