FDI3632

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

39ns

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Published :

2004

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

9mOhm @ 80A, 10V

Turn On Delay Time :

30 ns

Power Dissipation-Max :

310W Tc

Supplier Device Package :

I2PAK (TO-262)

Weight :

2.084g

Voltage - Rated DC :

100V

RoHS Status :

RoHS Compliant

Input Capacitance :

6nF

Rds On Max :

9 mΩ

Drain to Source Resistance :

7.5mOhm

Drain to Source Breakdown Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Turn-Off Delay Time :

96 ns

Packaging :

Tube

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Max Operating Temperature :

175°C

Current - Continuous Drain (Id) @ 25°C :

12A Ta 80A Tc

Series :

PowerTrench®

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

80A

Fall Time (Typ) :

46 ns

Number of Elements :

1

Power Dissipation :

310W

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount :

Through Hole