FDH50N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

625W Tc

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 10V

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

192A

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

48A

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Pin Count :

3

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.105Ohm

Series :

UniFET™

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

500V

JESD-609 Code :

e3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

105m Ω @ 24A, 10V

Package / Case :

TO-247-3

Reach Compliance Code :

Unknown

Vgs (Max) :

±30V

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-247AD

Avalanche Energy Rating (Eas) :

1868 mJ

Transistor Application :

SWITCHING

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Input Capacitance (Ciss) (Max) @ Vds :

6.46pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

10V