FDH44N50
- Mfr.Part #
- FDH44N50
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO247-3
- Stock
- 67
- In Stock :
- 67
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 45 ns
- Threshold Voltage :
- 3.15V
- Power Dissipation :
- 750W
- Factory Lead Time :
- 7 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 22A, 10V
- Drain to Source Breakdown Voltage :
- 500V
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 750W Tc
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Current Rating :
- 44A
- Resistance :
- 120mOhm
- Continuous Drain Current (ID) :
- 44A
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Turn On Delay Time :
- 16 ns
- Voltage - Rated DC :
- 500V
- Package / Case :
- TO-247-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5335pF @ 25V
- Lead Free :
- Lead Free
- Termination :
- Through Hole
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- 3.15 V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- Width :
- 4.82mm
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Weight :
- 6.39g
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Dual Supply Voltage :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 108nC @ 10V
- Rise Time :
- 84ns
- Height :
- 20.82mm
- Mount :
- Through Hole
- Fall Time (Typ) :
- 79 ns
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 15.87mm
- Datasheets
- FDH44N50

N-Channel Tube 120m Ω @ 22A, 10V ±30V 5335pF @ 25V 108nC @ 10V TO-247-3
FDH44N50 Description
FDH44N50 MOSFET is based on established silicon processes that provide designers with an extensive range of devices. FDH44N50 datasheet available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing. ON Semiconductor FDH44N50 is used in power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDH44N50 Features
Improved Gate, avalanche and high reapplied dv/dt ruggedness
Low gate charge Qg results in simple drive requirement
Reduced RDS(on)
Improved switching speed with low EMI
Reduced Miller capacitance and low Input capacitance
FDH44N50 Applications
Power factor correction
Electronic lamp ballasts
Flat panel display
TV power
ATX
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