FDD4685
- Mfr.Part #
- FDD4685
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 8.4A/32A DPAK
- Stock
- 111,606
- In Stock :
- 111,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Contact Plating :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 8.4A, 10V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Drain Current-Max (Abs) (ID) :
- 40A
- Power Dissipation-Max :
- 69W Tc
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Width :
- 6.22mm
- Turn On Delay Time :
- 8 ns
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 hours ago)
- Continuous Drain Current (ID) :
- 8.4mA
- Rise Time :
- 15ns
- Nominal Vgs :
- -1.6 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 40V
- Resistance :
- 27mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 8.4A Ta 32A Tc
- Dual Supply Voltage :
- -40V
- Series :
- PowerTrench®
- Base Part Number :
- FDD4685
- Threshold Voltage :
- -1.6V
- Drain to Source Breakdown Voltage :
- -40V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Power Dissipation :
- 69W
- Input Capacitance (Ciss) (Max) @ Vds :
- 2380pF @ 20V
- Published :
- 2006
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.73mm
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 14 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 260.37mg
- Voltage - Rated DC :
- -40V
- Factory Lead Time :
- 8 Weeks
- Termination :
- SMD/SMT
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- -8.4A
- Height :
- 2.39mm
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 34 ns
- Datasheets
- FDD4685

P-Channel Tape & Reel (TR) 27m Ω @ 8.4A, 10V ±20V 2380pF @ 20V 27nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD4685 Description
The FDD4685 is a -40V P-channel PowerTrench? MOSFET having been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD4685 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of the previous generation. Soft body diode performance of new PowerTrench? MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification.
FDD4685 Features
-
Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A
-
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A
-
High-performance trench technology for extremely low rDS(on)
-
RoHS Compliant
FDD4685 Applications
-
DC power source usage
-
Uninterruptible power supplies
-
Electric motor speed control
-
Solar
-
Power grid
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