FDD4685
- Mfr.Part #
- FDD4685
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 8.4A/32A DPAK
- Stock
- 111,606
- In Stock :
- 111,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 8.4A Ta 32A Tc
- Nominal Vgs :
- -1.6 V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Width :
- 6.22mm
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 8 ns
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Base Part Number :
- FDD4685
- Drain Current-Max (Abs) (ID) :
- 40A
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Published :
- 2006
- Drain to Source Breakdown Voltage :
- -40V
- FET Type :
- P-Channel
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 8.4mA
- Turn-Off Delay Time :
- 34 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 69W Tc
- Power Dissipation :
- 69W
- Length :
- 6.73mm
- Rise Time :
- 15ns
- Element Configuration :
- Single
- Weight :
- 260.37mg
- Current Rating :
- -8.4A
- Resistance :
- 27mOhm
- Height :
- 2.39mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- -40V
- Fall Time (Typ) :
- 14 ns
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2380pF @ 20V
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 8.4A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 hours ago)
- Threshold Voltage :
- -1.6V
- Number of Terminations :
- 2
- Dual Supply Voltage :
- -40V
- Drain to Source Voltage (Vdss) :
- 40V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDD4685
FDD4685 Documents

P-Channel Tape & Reel (TR) 27m Ω @ 8.4A, 10V ±20V 2380pF @ 20V 27nC @ 5V 40V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD4685 Description
The FDD4685 is a -40V P-channel PowerTrench? MOSFET having been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The latest medium voltage power MOSFET FDD4685 is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of the previous generation. Soft body diode performance of new PowerTrench? MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification.
FDD4685 Features
-
Max rDS(on) = 27mΩ at VGS = -10V, ID = -8.4A
-
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -7A
-
High-performance trench technology for extremely low rDS(on)
-
RoHS Compliant
FDD4685 Applications
-
DC power source usage
-
Uninterruptible power supplies
-
Electric motor speed control
-
Solar
-
Power grid
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