FDC5612
- Mfr.Part #
- FDC5612
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 4.3A SUPERSOT6
- Stock
- 147,065
- In Stock :
- 147,065
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 1.7mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 4.3A, 10V
- Height :
- 1.1mm
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 11 ns
- Current Rating :
- 4.3A
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- Published :
- 1999
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 60V
- Length :
- 3mm
- Factory Lead Time :
- 5 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Max Junction Temperature (Tj) :
- 150°C
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 25V
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 2.2V
- Power Dissipation-Max :
- 1.6W Ta
- Dual Supply Voltage :
- 60V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 19 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Fall Time (Typ) :
- 8 ns
- Power Dissipation :
- 1.6W
- Drain to Source Breakdown Voltage :
- 60V
- Continuous Drain Current (ID) :
- 4.3A
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Ta
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Number of Terminations :
- 6
- Resistance :
- 55mOhm
- Contact Plating :
- Tin
- Rise Time :
- 8ns
- Mounting Type :
- Surface Mount
- Weight :
- 36mg
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Datasheets
- FDC5612

N-Channel Tape & Reel (TR) 55m Ω @ 4.3A, 10V ±20V 650pF @ 25V 18nC @ 10V SOT-23-6 Thin, TSOT-23-6
FDC5612 Description
The FDC5612 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
FDC5612 Features
-
Low gate charge (12.5nC typical)
-
Fast switching speed
-
High performance trench technology for extremely low RDS(ON)
-
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
-
ROHS3 Compliant
-
Lead Free
-
No SVHC
FDC5612 Applications
-
Switching Application
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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