FDC2612

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Weight :

36mg

Transistor Application :

SWITCHING

Number of Pins :

6

Factory Lead Time :

15 Weeks

Rise Time :

6ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Power Dissipation :

1.6W

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Continuous Drain Current (ID) :

1.1A

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Pbfree Code :

yes

Width :

1.7mm

Current Rating :

1.1A

Turn On Delay Time :

6 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Fall Time (Typ) :

6 ns

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

200V

Rds On (Max) @ Id, Vgs :

725m Ω @ 1.1A, 10V

Height :

1mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Series :

PowerTrench®

Turn-Off Delay Time :

17 ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

234pF @ 100V

Number of Terminations :

6

Resistance :

725MOhm

Vgs (Max) :

±20V

Lead Free :

Lead Free

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Contact Plating :

Tin

Power Dissipation-Max :

1.6W Ta

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED