FDBL0065N40
- Mfr.Part #
- FDBL0065N40
- Manufacturer
- onsemi
- Package / Case
- 8-PowerSFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 300A 8HPSOF
- Stock
- 3,504
- In Stock :
- 3,504
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 8 Weeks
- Rds On (Max) @ Id, Vgs :
- 0.65m Ω @ 80A, 10V
- Peak Reflow Temperature (Cel) :
- 245
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 300A
- JEDEC-95 Code :
- MO-299A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 15900pF @ 25V
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 296nC @ 10V
- Series :
- PowerTrench®
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 300A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 40V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Terminal Form :
- NO LEAD
- Number of Terminations :
- 8
- Weight :
- 850.0521mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Power Dissipation-Max :
- 429W Tj
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Pbfree Code :
- yes
- Package / Case :
- 8-PowerSFN
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 1064 mJ
- Drain to Source Voltage (Vdss) :
- 40V
- Published :
- 2013
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.00065Ohm
- Datasheets
- FDBL0065N40

N-Channel Tape & Reel (TR) 0.65m Ω @ 80A, 10V ±20V 15900pF @ 25V 296nC @ 10V 40V 8-PowerSFN
FDBL0065N40 Description
The FDBL0065N40 is a PowerTrench? N-Channel MOSFET. A current channel is created by electrons in an N-Channel MOSFET. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must be 2 to 3 times the size of the N-Channel chip. As a result, MOSFET transistor N-Channels are frequently preferred for high current applications.
FDBL0065N40 Features
? Typical RDS(on) = 0.5m at VGS= 10V, ID = 80A
? Typical QG(tot) = 220nC at VGS =10V, ID = 80A
? UIS Capability
? High-performance
? RoHS Compliant
FDBL0065N40 Applications
? Drive for industrial motors
? Power Supply for Industry
? Automation in Industry
? Battery-powered equipment
? Battery Security
? Inverters for Solar
? Energy Inverters and UPS
? Storage of energy
? Switch to Load
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