FDB9406-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

7710pF @ 25V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Weight :

1.31247g

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Series :

Automotive, AEC-Q101, PowerTrench®

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 80A, 10V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Number of Terminations :

2

Fall Time (Typ) :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Form :

Gull wing

Power Dissipation :

176W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

176W Tj

Drain to Source Breakdown Voltage :

40V

Turn-Off Delay Time :

50 ns

Packaging :

Cut Tape (CT)

Turn On Delay Time :

28 ns

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Rise Time :

48ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Case Connection :

DRAIN

Factory Lead Time :

5 Weeks

Radiation Hardening :

No

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

110A

Current - Continuous Drain (Id) @ 25°C :

110A Tc