FDB44N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Factory Lead Time :

4 Weeks

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Series :

UniFET™

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Case Connection :

DRAIN

Height :

4.83mm

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

FAST SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Pbfree Code :

yes

Voltage - Rated DC :

250V

Length :

10.67mm

Rds On (Max) @ Id, Vgs :

69m Ω @ 22A, 10V

Terminal Form :

Gull wing

Number of Pins :

2

Threshold Voltage :

5V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Current Rating :

44A

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

115 ns

FET Type :

N-Channel

Number of Elements :

1

Turn-Off Delay Time :

85 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

307W

Rise Time :

400ns

Mounting Type :

Surface Mount

Turn On Delay Time :

55 ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2870pF @ 25V

Weight :

1.31247g

ECCN Code :

EAR99

Width :

11.33mm

Resistance :

69mOhm

Power Dissipation-Max :

307W Tc

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Nominal Vgs :

5 V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

44A

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Published :

2005

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Number of Channels :

1

Drain to Source Breakdown Voltage :

250V