FDAF69N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

1894 mJ

Surface Mount :

No

Qualification Status :

COMMERCIAL

Peak Reflow Temperature (Cel) :

Not Applicable

Drain-source On Resistance-Max :

0.041Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

UniFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Number of Terminations :

3

Power Dissipation-Max :

115W Tc

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Rds On (Max) @ Id, Vgs :

41m Ω @ 17A, 10V

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Additional Feature :

FAST SWITCHING

Transistor Element Material :

SILICON

Package / Case :

TO-3P-3 Full Pack

Drain Current-Max (Abs) (ID) :

34A

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

250V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

4.64pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

DS Breakdown Voltage-Min :

250V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

136A