FDA70N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

200V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Transistor Element Material :

SILICON

Power Dissipation-Max :

417W Tc

Length :

15.8mm

Threshold Voltage :

5V

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

70A

Resistance :

35mOhm

Nominal Vgs :

5 V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

3970pF @ 25V

Pbfree Code :

yes

Number of Pins :

3

Continuous Drain Current (ID) :

70A

Power Dissipation :

417W

Additional Feature :

FAST SWITCHING

FET Type :

N-Channel

Transistor Application :

SWITCHING

Package / Case :

TO-3P-3, SC-65-3

Published :

2005

RoHS Status :

ROHS3 Compliant

Series :

UniFET™

Voltage - Rated DC :

200V

Number of Elements :

1

Height :

20.1mm

Weight :

6.401g

Fall Time (Typ) :

39 ns

Mount :

Through Hole

Number of Terminations :

3

Turn-Off Delay Time :

65 ns

Width :

5mm

Factory Lead Time :

7 Weeks

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Radiation Hardening :

No

Rise Time :

235ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

35m Ω @ 35A, 10V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Turn On Delay Time :

71 ns

Pulsed Drain Current-Max (IDM) :

280A

Gate to Source Voltage (Vgs) :

30V