FDA69N25
- Mfr.Part #
- FDA69N25
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 10,455
- In Stock :
- 10,455
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 130 ns
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Published :
- 2013
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 480W Tc
- Current Rating :
- 69A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 276A
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Height :
- 20.1mm
- Factory Lead Time :
- 9 Weeks
- Drain to Source Breakdown Voltage :
- 250V
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Package / Case :
- TO-3P-3, SC-65-3
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Additional Feature :
- FAST SWITCHING
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 34.5A, 10V
- Voltage - Rated DC :
- 250V
- Continuous Drain Current (ID) :
- 69A
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Length :
- 15.8mm
- Current - Continuous Drain (Id) @ 25°C :
- 69A Tc
- Weight :
- 6.401g
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 480W
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 220 ns
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Width :
- 5mm
- Turn On Delay Time :
- 95 ns
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- UniFET™
- Rise Time :
- 885ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 4640pF @ 25V
- Datasheets
- FDA69N25

N-Channel Tube 41m Ω @ 34.5A, 10V ±30V 4640pF @ 25V 100nC @ 10V TO-3P-3, SC-65-3
FDA69N25 Description
FDA69N25 is an N-channel UniFETTM MOSFET.UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. The FDA69N25 MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The onsemi FDA69N25 is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDA69N25 Features
-
RDS(on) = 41m? ( Max.)@ VGS = 10V, ID = 34.5A
-
Low gate charge ( Typ. 77nC)
-
Low Crss ( Typ. 84pF)
-
Drain-Source Voltage: 250V
-
Gate Source Voltage: ±30V
FDA69N25 Applications
-
PDP TV
-
Uninterruptible Power Supply
-
AC-DC Power Supply
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