FDA38N30

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

312W Tc

Width :

6.35mm

Turn On Delay Time :

53 ns

Packaging :

Tube

Resistance :

85mOhm

Number of Terminations :

3

Fall Time (Typ) :

54 ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

85m Ω @ 19A, 10V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Length :

6.35mm

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Weight :

6.401g

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

6.35mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 25V

Rise Time :

110ns

Drain to Source Breakdown Voltage :

300V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Turn-Off Delay Time :

118 ns

Threshold Voltage :

5V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Operating Mode :

ENHANCEMENT MODE

Series :

UniFET™

Power Dissipation :

312W

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-3P-3, SC-65-3

Published :

2013

Mount :

Through Hole

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Continuous Drain Current (ID) :

38A

Radiation Hardening :

No

Mounting Type :

Through Hole

Element Configuration :

Single