FDA18N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

945 mJ

Threshold Voltage :

5V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Rise Time :

165ns

Number of Elements :

1

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

265m Ω @ 9.5A, 10V

Series :

UniFET™

FET Type :

N-Channel

Package / Case :

TO-3P-3, SC-65-3

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Mount :

Through Hole

Turn-Off Delay Time :

95 ns

Number of Pins :

3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Fall Time (Typ) :

90 ns

Pulsed Drain Current-Max (IDM) :

76A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Turn On Delay Time :

55 ns

Additional Feature :

FAST SWITCHING

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

19A

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

500V

Resistance :

265mOhm

Published :

2014

Height :

18.9mm

Power Dissipation-Max :

239W Tc

Power Dissipation :

239W

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Width :

5mm

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

7 Weeks

Pbfree Code :

yes

Length :

15.8mm

Weight :

6.401g

Terminal Finish :

Tin (Sn)