FDA032N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Resistance :

3.2mOhm

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

940A

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

15160pF @ 25V

Drain to Source Breakdown Voltage :

75V

Series :

PowerTrench®

Pbfree Code :

yes

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

230 ns

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

375W

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Power Dissipation-Max :

375W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Mounting Type :

Through Hole

Rise Time :

191ns

Mount :

Through Hole

Continuous Drain Current (ID) :

235A

Published :

2013

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 75A, 10V

Number of Pins :

3

Turn-Off Delay Time :

335 ns

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

121 ns

RoHS Status :

ROHS3 Compliant

Weight :

6.401g

Package / Case :

TO-3P-3, SC-65-3

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V