FDA032N08
- Mfr.Part #
- FDA032N08
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 120A TO3PN
- Stock
- 9,208
- In Stock :
- 9,208
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 75A, 10V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-3P-3, SC-65-3
- Resistance :
- 3.2mOhm
- Mounting Type :
- Through Hole
- Series :
- PowerTrench®
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 121 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Rise Time :
- 191ns
- Factory Lead Time :
- 8 Weeks
- Power Dissipation-Max :
- 375W Tc
- Turn On Delay Time :
- 230 ns
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 75V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 15160pF @ 25V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 940A
- Continuous Drain Current (ID) :
- 235A
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2013
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation :
- 375W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Weight :
- 6.401g
- Packaging :
- Tube
- Turn-Off Delay Time :
- 335 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Datasheets
- FDA032N08
FDA032N08 Documents

N-Channel Tube 3.2m Ω @ 75A, 10V ±20V 15160pF @ 25V 220nC @ 10V TO-3P-3, SC-65-3
FDA032N08 Description
FDA032N08 is made with Fairchild Semiconductor's innovative PowerTrench? technology, which is designed to reduce on-state resistance while preserving exceptional switching performance.
FDA032N08 Features
?RDS(o n) = 2.5 mQ (Typ.) @ 10 V vgs, 75 A
?High-speed switching
?Low Entry Fee
?Excellent performance Extremely Low RDS Trench Tech No logy (o n)
?High Power and Precision Capability han dli
Compliance with RoHS
FDA032N08 Applications
? Application control and motor drive
?Atx / Server / Telecom PSU Synchronous Rectificati on
? Motor Drives and Uninterruptible Power Supplies ? Battery Protection Circuit
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