FCP7N60
- Mfr.Part #
- FCP7N60
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7A TO220-3
- Stock
- 16,200
- In Stock :
- 16,200
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Current Rating :
- 11A
- Power Dissipation-Max :
- 83W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 920pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.7mm
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 75 ns
- Resistance :
- 600mOhm
- Drain Current-Max (Abs) (ID) :
- 7A
- Number of Terminations :
- 3
- Power Dissipation :
- 83W
- Transistor Application :
- SWITCHING
- Rise Time :
- 55ns
- Radiation Hardening :
- No
- Height :
- 9.4mm
- Series :
- SuperFET™
- Turn On Delay Time :
- 35 ns
- Fall Time (Typ) :
- 32 ns
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Threshold Voltage :
- 5V
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Weight :
- 1.8g
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Length :
- 10.1mm
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 600V
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 7A
- Drain to Source Breakdown Voltage :
- 600V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 3.5A, 10V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- Datasheets
- FCP7N60

N-Channel Tube 600m Ω @ 3.5A, 10V ±30V 920pF @ 25V 30nC @ 10V TO-220-3
FCP7N60 Description
The ON Semiconductor FCP7N60 is a SuperFET? MOSFET from the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, and provide superior switching performance, dv/dt rate and higher avalanche energy.
FCP7N60 Features
-
650V @TJ = 150°C
-
Typ. RDS(on) = 530mΩ
-
Ultra-low gate charge ( Typ. Qg = 23nC )
-
Low effective output capacitance ( Typ. Coss.eff = 60pF )
-
100% avalanche tested
-
RoHS compliant
FCP7N60 Applications
-
LCD/LED/PDP TV
-
Solar Inverter
-
AC-DC Power Supply
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCP7N60_F080 | onsemi | 35,043 | MOSFET N-CH 600V 7A TO220-3 |
















