FCP380N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2.5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

9.4mm

Number of Elements :

1

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Series :

SuperFET® II

Rds On (Max) @ Id, Vgs :

380m Ω @ 5A, 10V

Drain to Source Breakdown Voltage :

650V

Weight :

1.8g

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

600V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

106W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1665pF @ 25V

Number of Pins :

3

Vgs (Max) :

±20V

Length :

10.67mm

FET Type :

N-Channel

ECCN Code :

EAR99

Turn On Delay Time :

14 ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Continuous Drain Current (ID) :

10.2A

Turn-Off Delay Time :

45 ns

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Width :

4.83mm

Current - Continuous Drain (Id) @ 25°C :

10.2A Tc

Published :

2010

Radiation Hardening :

No

Rise Time :

7ns

Fall Time (Typ) :

6 ns

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Power Dissipation :

31W

Pbfree Code :

yes