FCP099N60E
- Mfr.Part #
- FCP099N60E
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 37A TO220-3
- Stock
- 24,420
- In Stock :
- 24,420
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3465pF @ 380V
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Rise Time :
- 23ns
- Package / Case :
- TO-220-3
- JESD-609 Code :
- e3
- Series :
- SuperFET® II
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- DS Breakdown Voltage-Min :
- 600V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Drain-source On Resistance-Max :
- 0.099Ohm
- Turn-Off Delay Time :
- 92 ns
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 809 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- HTS Code :
- 8541.29.00.95
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 357W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 18.5A, 10V
- Pulsed Drain Current-Max (IDM) :
- 111A
- Weight :
- 1.8g
- Turn On Delay Time :
- 24 ns
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Fall Time (Typ) :
- 22 ns
- Continuous Drain Current (ID) :
- 37A
- Datasheets
- FCP099N60E

N-Channel Tube 99m Ω @ 18.5A, 10V ±20V 3465pF @ 380V 114nC @ 10V 600V TO-220-3
FCP099N60E Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 809 mJ.A device's maximal input capacitance is 3465pF @ 380V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 37A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 92 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 111A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FCP099N60E Features
the avalanche energy rating (Eas) is 809 mJ
a continuous drain current (ID) of 37A
the turn-off delay time is 92 ns
based on its rated peak drain current 111A.
a 600V drain to source voltage (Vdss)
FCP099N60E Applications
There are a lot of ON Semiconductor
FCP099N60E applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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