FCH25N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Rise Time :

22ns

Rds On (Max) @ Id, Vgs :

126m Ω @ 12.5A, 10V

Pulsed Drain Current-Max (IDM) :

75A

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

25A Tc

ECCN Code :

EAR99

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

Radiation Hardening :

No

Mounting Type :

Through Hole

FET Type :

N-Channel

Mount :

Through Hole

Published :

2013

Number of Elements :

1

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±30V

Height :

20.82mm

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

5 ns

Turn On Delay Time :

21 ns

Turn-Off Delay Time :

68 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

3352pF @ 100V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247AB

Length :

15.87mm

Power Dissipation-Max :

216W Tc

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

25A

Package / Case :

TO-247-3

Width :

4.82mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Series :

SupreMOS™

Factory Lead Time :

12 Weeks

Weight :

6.39g

Number of Pins :

3

Power Dissipation :

216W

Terminal Finish :

Tin (Sn)

Packaging :

Tube

REACH SVHC :

No SVHC