FCD380N60E
- Mfr.Part #
- FCD380N60E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10.2A DPAK
- Stock
- 183,776
- In Stock :
- 183,776
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Power Dissipation-Max :
- 106W Tc
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 64 ns
- Turn On Delay Time :
- 17 ns
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JEDEC-95 Code :
- TO-252AA
- Weight :
- 260.37mg
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 9ns
- Drain to Source Voltage (Vdss) :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 10.2A Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Avalanche Energy Rating (Eas) :
- 211.6 mJ
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Continuous Drain Current (ID) :
- 10.2A
- ECCN Code :
- EAR99
- Packaging :
- Digi-Reel®
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Power Dissipation :
- 106W
- Width :
- 6.22mm
- JESD-609 Code :
- e3
- Length :
- 6.73mm
- Fall Time (Typ) :
- 10 ns
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Series :
- SuperFET® II
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5A, 10V
- Height :
- 2.39mm
- Pbfree Code :
- yes
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- FCD380N60
- Contact Plating :
- Tin
- HTS Code :
- 8541.29.00.95
- Drain to Source Breakdown Voltage :
- 650V
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FCD380N60E

N-Channel Digi-Reel® 380m Ω @ 5A, 10V ±20V 1770pF @ 25V 45nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
FCD380N60E Description
FCD380N60E is an N-Channel SUPERFET? II Power MOSFET manufactured by onsemi. The onsemi FCD380N60E utilizes charge balance technology for outstanding low on-resistance and lower gate charge performance. The FCD380N60E is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, SuperFET II MOSFET FCD380N60E is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCD380N60E Features
-
650 V at TJ = 150°C
-
100% Avalanche Tested
-
Max. RDS(on) = 380 mΩ
-
Ultra-Low Gate Charge ( Typ. Qg = 34 nC )
-
Low Effective Output Capacitance ( Typ. Coss.eff = 97 pF )
FCD380N60E Applications
-
PFC
-
Server/telecom power
-
FPD TV power
-
ATX power
-
Industrial power applications
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