FCB070N65S3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

44A

Drain to Source Breakdown Voltage :

650V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

245

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

3090pF @ 400V

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Vgs(th) (Max) @ Id :

4.5V @ 4.4mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

70m Ω @ 22A, 10V

Mounting Type :

Surface Mount

Weight :

1.31247g

Drain-source On Resistance-Max :

0.07Ohm

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

26 ns

Series :

SuperFET® III

Case Connection :

DRAIN

Turn-Off Delay Time :

89 ns

Vgs (Max) :

±30V

Additional Feature :

AVALANCHE RATED, HIGH VOLTAGE

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation-Max :

312W Tc

Threshold Voltage :

4.5V

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Published :

2016

Factory Lead Time :

13 Weeks

Reach Compliance Code :

not_compliant

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Power Dissipation :

312W

Number of Channels :

1

JESD-609 Code :

e3

Height :

4.83mm

Operating Mode :

ENHANCEMENT MODE